Ferroelectricity in ultrathin BaTiO3 films: probing the size effect by ultraviolet Raman spectroscopy.

نویسندگان

  • D A Tenne
  • P Turner
  • J D Schmidt
  • M Biegalski
  • Y L Li
  • L Q Chen
  • A Soukiassian
  • S Trolier-McKinstry
  • D G Schlom
  • X X Xi
  • D D Fong
  • P H Fuoss
  • J A Eastman
  • G B Stephenson
  • C Thompson
  • S K Streiffer
چکیده

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180 degrees domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

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عنوان ژورنال:
  • Physical review letters

دوره 103 17  شماره 

صفحات  -

تاریخ انتشار 2009